Manufacturer Part Number | 2SK1119(F) |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - FETs, MOSFETs - Single |
Available Quantity | 115970 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | MOSFET N-CH 1000V 4A TO-220AB |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | 2SK1119(F).pdf |
Part Number | 2SK1119(F) |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.8 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | 2SK1119(F) |
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