| Manufacturer Part Number | IPB80N06S2L09ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Available Quantity | 191730 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Description | MOSFET N-CH 55V 80A TO263-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Production Status (Lifecycle) | In Production |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | IPB80N06S2L09ATMA1.pdf |
| Part Number | IPB80N06S2L09ATMA1 |
|---|---|
| Manufacturer Lead time | 6-8 weeks |
| Condition | New & Unused, Original Sealed |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 52A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 125µA |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2620pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | 0.001 KG |
| Application | Email for details |
| Replacement Part | IPB80N06S2L09ATMA1 |
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