Manufacturer Part Number | SIHD4N80E-GE3 |
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Manufacturer | Vishay Siliconix |
Product Category | Transistors - FETs, MOSFETs - Single |
Available Quantity | 67080 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | MOSFET N-CHAN 800V FP TO-252 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | SIHD4N80E-GE3.pdf |
Part Number | SIHD4N80E-GE3 |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.27 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 622pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 69W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | SIHD4N80E-GE3 |
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