Manufacturer Part Number | SIHP11N80E-GE3 |
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Manufacturer | Vishay Siliconix |
Product Category | Transistors - FETs, MOSFETs - Single |
Available Quantity | 151000 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | MOSFET N-CH 800V 12A TO220AB |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | SIHP11N80E-GE3.pdf |
Part Number | SIHP11N80E-GE3 |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1670pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 179W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | SIHP11N80E-GE3 |
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