Manufacturer Part Number | TSM80N1R2CI C0G |
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Manufacturer | Taiwan Semiconductor Corporation |
Product Category | Transistors - FETs, MOSFETs - Single |
Available Quantity | 163450 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | MOSFET N-CH 800V 5.5A ITO220 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | TSM80N1R2CI C0G.pdf |
Part Number | TSM80N1R2CI C0G |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 1.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19.4nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 685pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | TSM80N1R2CI C0G |
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