Manufacturer Part Number | IPD60N10S412ATMA1 |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Available Quantity | 106550 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | MOSFET N-CH TO252-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | IPD60N10S412ATMA1.pdf |
Part Number | IPD60N10S412ATMA1 |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 12.2 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2470pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-313 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | IPD60N10S412ATMA1 |
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