| Manufacturer Part Number | RN1962FE(TE85L,F) |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Available Quantity | 95420 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Description | TRANS 2NPN PREBIAS 0.1W ES6 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Production Status (Lifecycle) | In Production |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | RN1962FE(TE85L,F).pdf |
| Part Number | RN1962FE(TE85L,F) |
|---|---|
| Manufacturer Lead time | 6-8 weeks |
| Condition | New & Unused, Original Sealed |
| Part Status | Obsolete |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Weight | 0.001 KG |
| Application | Email for details |
| Replacement Part | RN1962FE(TE85L,F) |
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