Manufacturer Part Number | RQ3E080BNTB |
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Manufacturer | Rohm Semiconductor |
Product Category | Transistors - FETs, MOSFETs - Single |
Available Quantity | 146030 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | MOSFET N-CH 30V 8A HSMT8 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | RQ3E080BNTB.pdf |
Part Number | RQ3E080BNTB |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 15.2 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) |
Package / Case | 8-PowerVDFN |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | RQ3E080BNTB |
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