Manufacturer Part Number | SIHB12N50E-GE3 |
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Manufacturer | Vishay Siliconix |
Product Category | Transistors - FETs, MOSFETs - Single |
Available Quantity | 133080 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | MOSFET N-CH 500V 10.5A TO-263 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | SIHB12N50E-GE3.pdf |
Part Number | SIHB12N50E-GE3 |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 886pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 114W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | SIHB12N50E-GE3 |
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