Manufacturer Part Number | EPC2108ENGRT |
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Manufacturer | EPC |
Product Category | Transistors - FETs, MOSFETs - Arrays |
Available Quantity | 190070 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | TRANS GAN 3N-CH BUMPED DIE |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | EPC2108ENGRT.pdf |
Part Number | EPC2108ENGRT |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 60V, 100V |
Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 9-VFBGA |
Supplier Device Package | 9-BGA (1.35x1.35) |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | EPC2108ENGRT |
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Our Email: [email protected]
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