| Manufacturer Part Number | IPG20N10S4L22AATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Available Quantity | 76320 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Description | MOSFET 2N-CH 100V 20A TDSON-8 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Production Status (Lifecycle) | In Production |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | IPG20N10S4L22AATMA1.pdf |
| Part Number | IPG20N10S4L22AATMA1 |
|---|---|
| Manufacturer Lead time | 6-8 weeks |
| Condition | New & Unused, Original Sealed |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
| Power - Max | 60W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
| Weight | 0.001 KG |
| Application | Email for details |
| Replacement Part | IPG20N10S4L22AATMA1 |
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