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| Manufacturer Part Number | SIDR610DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Available Quantity | 127870 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Description | MOSFET N-CHAN 200V PPAK SO-8DC |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Production Status (Lifecycle) | In Production |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | SIDR610DP-T1-GE3.pdf |
| Part Number | SIDR610DP-T1-GE3 |
|---|---|
| Manufacturer Lead time | 6-8 weeks |
| Condition | New & Unused, Original Sealed |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 39.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 31.9 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8DC |
| Package / Case | PowerPAK® SO-8 |
| Weight | 0.001 KG |
| Application | Email for details |
| Replacement Part | SIDR610DP-T1-GE3 |
QY Components have the best price for SIDR610DP-T1-GE3, we only sell genuine parts.
If you would like to buy SIDR610DP-T1-GE3, you can submit a request for quotation, or send an email to us, we will send you the quotation within 12 hours. After the quotation, you can place your order for SIDR610DP-T1-GE3, we will send you our invoice and ship to you to any country.
Our Email: [email protected]
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