Manufacturer Part Number | MT3S113TU,LF |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - Bipolar (BJT) - RF |
Available Quantity | 9740 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | RF SIGE HETEROJUNCTION BIPOLAR N |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | MT3S113TU,LF.pdf |
Part Number | MT3S113TU,LF |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.3V |
Frequency - Transition | 11.2GHz |
Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
Gain | 12.5dB |
Power - Max | 900mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | UFM |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | MT3S113TU,LF |
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