Manufacturer Part Number | GT10J312(Q) |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - IGBTs - Single |
Available Quantity | 161030 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | IGBT 600V 10A 60W TO220SM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | GT10J312(Q).pdf |
Part Number | GT10J312(Q) |
---|---|
Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Obsolete |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 10A |
Current - Collector Pulsed (Icm) | 20A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Power - Max | 60W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | 400ns/400ns |
Test Condition | 300V, 10A, 100 Ohm, 15V |
Reverse Recovery Time (trr) | 200ns |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-220SM |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | GT10J312(Q) |
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