| Manufacturer Part Number | TPN1110ENH,L1Q |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Available Quantity | 38960 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Description | MOSFET N-CH 200V 7.2A 8TSON |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Production Status (Lifecycle) | In Production |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | TPN1110ENH,L1Q.pdf |
| Part Number | TPN1110ENH,L1Q |
|---|---|
| Manufacturer Lead time | 6-8 weeks |
| Condition | New & Unused, Original Sealed |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 114 mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
| Weight | 0.001 KG |
| Application | Email for details |
| Replacement Part | TPN1110ENH,L1Q |
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