ON Semiconductor Distributor www.qycomp.com HGT1S10N120BNST
Manufacturer Part NumberHGT1S10N120BNST
ManufacturerON Semiconductor
Product CategoryTransistors - IGBTs - Single
Available Quantity126940 Pieces
Unit PriceQuote by Email ([email protected])
DescriptionIGBT 1200V 35A 298W TO263AB
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Production Status (Lifecycle)In Production
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download HGT1S10N120BNST.pdf

Product Detailed Description

Part Number HGT1S10N120BNST
Manufacturer Lead time 6-8 weeks
Condition New & Unused, Original Sealed
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Weight 0.001 KG
Application Email for details
Replacement Part HGT1S10N120BNST

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ON Semiconductor Distributor

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